An novel thin layer SOI copyright-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The potential of the P-shield layer is clamped by two series-connected diodes. Therefore. the reverse voltage is sustained by the P-shield/Ndrift junction rather than the P-base/CS junction during the off-state. https://www.isbasvurusuyap.com/product-category/covers-bus-bins/