Recently. double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However. DGMOSFETs for subthreshold circuit design have not been much explored in comparison to those for strong inversion-based design. https://www.taqueriamedina.com/product-category/accessories-bags/